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Aluminum Nitride Substrate
US$10.00-100.00 / Piece
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What is Aluminum Nitride Ceramic High Thermal Conductivity Round Substrate

About this Item
Details
Company Profile

Price

Min. Order Reference FOB Price

1 Piece US$10.00-100.00 / Piece

Sepcifications

  • Application Aerospace, Electronics, Medical, Refractory, Semiconductor, Industrial
  • Material AlN
  • Transport Package Carton, Wooden Box, Pallet
  • Specification Customized
  • Trademark WINTRUSTEK
  • Origin Fujian, China
  • Density 3.28-3.30 g/cm3
  • Color Grey, Black
  • Thermal Conductivity 160-230 W/M.K
  • Max Working Temperature (in Air) 800 C
  • Max Working Temperature (in Vacuum) 1200 C
  • Max Working Temperature (in Inert Gas) 1500 C
  • Dielectric Strength 15 Kv/mm
  • Type Ceramic Plate

Product Description

Product Description Aluminium Nitride (AlN) ceramic is a technical ceramic material renowned for its exceptional thermal conductivity and remarkable electrical insulating properties. Aluminium Nitride (AlN) has a high thermal conductivity that ranges from 160 to 230 W/mK. It exhibits favorable ...

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Aluminum Nitride Substrate Comparison
Transaction Info
Price US$10.00-100.00 / Piece US$1.00-10.00 / Piece US$0.20 / Piece US$1.00-15.00 / Piece US$1.00-10.00 / Piece
Min Order 1 Piece 1 Piece 1,000 Pieces 1 Piece 1 Piece
Payment Terms LC, T/T, PayPal, Small-amount payment T/T, PayPal, Western Union LC, T/T, D/P, PayPal, Western Union, Small-amount payment T/T, PayPal, Western Union T/T, PayPal, Western Union
Quality Control
Management System Certification - - - - -
Trade Capacity
Export Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Europe, Southeast Asia/ Mideast, Africa, East Asia(Japan/ South Korea), Australia, Domestic North America, Europe, East Asia(Japan/ South Korea), Domestic North America, South America, Europe, Southeast Asia/ Mideast, Africa, East Asia(Japan/ South Korea), Australia, Domestic North America, South America, Europe, Southeast Asia/ Mideast, Africa, East Asia(Japan/ South Korea), Australia, Domestic
Annual Export Revenue - - - - -
Business Model - - ODM, OEM - -
Average Lead Time Peak Season Lead Time: one month
Off Season Lead Time: within 15 workdays		 Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays		 Peak Season Lead Time: one month
Off Season Lead Time: within 15 workdays		 Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays		 Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays
Product Attributes
Specification
Application: Aerospace, Electronics, Medical, Refractory, Semiconductor, Industrial;
Material: AlN;
Density: 3.28-3.30 g/cm3;
Color: Grey, Black;
Thermal Conductivity: 160-230 W/M.K;
Max Working Temperature (in Air): 800 C;
Max Working Temperature (in Vacuum): 1200 C;
Max Working Temperature (in Inert Gas): 1500 C;
Dielectric Strength: 15 Kv/mm;
Type: Ceramic Plate;
Application: Electronic Devices, Power Supply, Semiconductors;
Conductive Layer: Customizable;
Material: Al2O3;
Process: Customizable;
Thickness: Customizable;
Density: 3.7g/Cm³;
Warp: ≤200um;
Wetability: ≥95%;
Flexural Strength: ≥330/350/700MPa;
Thermal Conductivity: 23W /M·K;
Dielectric Constant: 9 MHz;
Dielectric Strength: ≥20kv/mm;
Hole Diameter: 120~ 160um;
Hole Spacing: ≥0.2mm;
Positioning Accuracy: ±150um;
Hole to Metal Edge Distance: ≥0mm;
Hole to Tile Edge Distance: ≥1mm;
Main Ingredients: Cu AG Ti;
Application: /;
Conductive Layer: /;
Material: /;
Process: /;
Shape: Custom;
Advantage: Long Service Life;
Applicable Industries: Hotels, Garment Shops, Building Material Shops;
Feature: High Thermal Conductivity;
Application: Electronic Devices, Power Supply, Semiconductors;
Conductive Layer: Customizable;
Material: AlN;
Process: Customizable;
Thickness: Customizable;
Density: 3.3G/Cm³;
Warpage: ≤200um;
Solder Wettability: ≥95%;
Flexural Strength: ≥350MPa;
Thermal Conductivity: ≥170W/M K;
Coefficient of Thermal Expansion: 4.7(20~ 300℃)10-6/K;
Dielectric Loss: 0.0005MHz;
Dielectric Constant: 9MHz;
Dielectric Strength: ≥20kv/mm;
Resistivity: 10^14ω.Cm;
Aperture: 120-160μm;
Aperture Pitch: ≥0.2mm;
Au Layer Thickness: 0.01-0.2 μm;
Ni Layer Thickness: 2-10 μm;
AG Layer Thickness: 0.03-1.0 μm;
Application: Electronic Devices, Power Supply, Semiconductors;
Conductive Layer: Customizable;
Material: Al2O3;
Process: Customizable;
Thickness: Customizable;
Density: 3.7g/Cm³;
Warp: ≤200um;
Wetability: ≥95%;
Flexural Strength: ≥330/350/700MPa;
Thermal Conductivity: 23W /M·K;
Dielectric Constant: 9 MHz;
Dielectric Strength: ≥20kv/mm;
Hole Diameter: 120~ 160um;
Hole Spacing: ≥0.2mm;
Positioning Accuracy: ±150um;
Hole to Metal Edge Distance: ≥0mm;
Hole to Tile Edge Distance: ≥1mm;
Main Ingredients: Cu AG Ti;
Supplier Name

Xiamen Wintrustek Advanced Materials Co., Ltd.

Diamond Member Audited Supplier

Shenyang Vhandy Technology Co., Ltd

Diamond Member Audited Supplier

TIANJIN YINGHUA NEW MATERIAL TECH CO., LTD.

Diamond Member Audited Supplier

Shenyang Vhandy Technology Co., Ltd

Diamond Member Audited Supplier

Shenyang Vhandy Technology Co., Ltd

Diamond Member Audited Supplier

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