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Customize Substrate
US$100.00 / Piece
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What is Customize Substrate/Silicon Carbide Substrate/Heat Dissipation Substrate

About this Item
Details
Company Profile

Price

Min. Order Reference FOB Price

5 Pieces US$100.00 / Piece

Sepcifications

  • Material Sic
  • Specification customizable
  • Trademark Anttrans
  • Origin China

Product Description

Product Description Heat Dissipation Substrate Product Introduction Heat dissipation substrates (also known as metal-based heat dissipation plates) are specialized materials designed for efficient heat conduction, primarily used in thermal management for electronic devices, LED lighting, and ...

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Customize Substrate Comparison
Transaction Info
Price US$100.00 / Piece US$5.00-10.00 / pc US$16.00-21.00 / pc US$36.00-41.00 / pc US$36.00-41.00 / pc
Min Order 5 Pieces 100 pc 100 pc 100 pc 100 pc
Payment Terms LC, T/T, D/P, PayPal T/T, PayPal T/T, PayPal T/T, PayPal T/T, PayPal
Quality Control
Management System Certification - - - - -
Trade Capacity
Export Markets Domestic Southeast Asia/ Mideast, East Asia(Japan/ South Korea) Southeast Asia/ Mideast, East Asia(Japan/ South Korea) Southeast Asia/ Mideast, East Asia(Japan/ South Korea) Southeast Asia/ Mideast, East Asia(Japan/ South Korea)
Annual Export Revenue - - - - -
Business Model ODM, OEM Own Brand, ODM, OEM Own Brand, ODM, OEM Own Brand, ODM, OEM Own Brand, ODM, OEM
Average Lead Time Peak Season Lead Time: one month
Off Season Lead Time: one month		 Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays		 Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays		 Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays		 Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays
Product Attributes
Specification
Material: Sic;
Application: Semi Standard;
Material: Compound Semiconductor;
Type: P-Type Semiconductor;
Growth Method: CZ;
Crystal Orientation: 100;
Dopant: Boron;
Resistivity: 1-100Ω;
Frront Side: Polished;
Edge: Polished;
Diameter: 50±0.2mm;
Thickness: 280±25μm;
Application: Semi Standard;
Material: Compound Semiconductor;
Type: P-Type Semiconductor;
Growth Method: CZ;
Crystal Orientation: 100;
Dopant: Boron;
Resistivity: 1-100Ω;
Frront Side: Polished;
Edge: Polished;
Diameter: 150±0.2mm;
Thickness: 675±25μm;
Application: Semi Standard;
Material: Compound Semiconductor;
Type: P-Type Semiconductor;
Growth Method: CZ;
Crystal Orientation: 100;
Dopant: Boron;
Resistivity: 1-100Ω;
Front Side: Polished;
Backside: Etched;
Diameter: 200±0.2mm;
Thickness: 725±25mm;
Oxide Thickness: 1000A;
Ttv: ≤25μm;
Warp: ≤40μm;
Bow: ≤40μm;
Application: Semi Standard;
Material: Compound Semiconductor;
Type: P-Type Semiconductor;
Growth Method: CZ;
Crystal Orientation: 100;
Dopant: Boron;
Resistivity: 1-100Ω;
Front Side: Polished;
Backside: Etched;
Diameter: 150±0.3mm;
Thickness: 675±25mm;
Oxide Thickness: 1000A;
Ttv: ≤10μm;
Warp: ≤30μm;
Bow: ≤30μm;
Supplier Name

Shanghai Anttrans Technology Co., Ltd

Gold Member Audited Supplier

Fine Silicon Manufacturing(Shanghai)Ltd.

Gold Member Audited Supplier

Fine Silicon Manufacturing(Shanghai)Ltd.

Gold Member Audited Supplier

Fine Silicon Manufacturing(Shanghai)Ltd.

Gold Member Audited Supplier

Fine Silicon Manufacturing(Shanghai)Ltd.

Gold Member Audited Supplier

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