| Specification |
Application: Detector, Diode, LCD Display Controller, Power Electronic Components, Radio, Refrigerator, Solar Cell, Television, Temperature Measurement, Laser;
Batch Number: up-to-Date;
Manufacturing Technology: Integrated Circuits Device;
Material: Sic;
Model: at-61004;
Package: No;
Signal Processing: No;
Type: Intrinsic Semiconductor;
Production Method: CVD;
Purity: 99.9999%;
Processing Method: Double Surface Polishing;
Main Appliying 1: Chips Wafers;
Main Appliying 2: Laser, Radar;
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Application: Semi Standard;
Material: Compound Semiconductor;
Type: P-Type Semiconductor;
Growth Method: CZ;
Crystal Orientation: 100;
Dopant: Boron;
Resistivity: 1-100Ω;
Frront Side: Polished;
Edge: Polished;
Diameter: 300±0.2mm;
Thickness: 775±25μm;
|
Application: Semi Standard;
Material: Compound Semiconductor;
Type: P-Type Semiconductor;
Growth Method: CZ;
Crystal Orientation: 100;
Dopant: Boron;
Resistivity: 1-100Ω;
Frront Side: Polished;
Edge: Polished;
Diameter: 300±0.2mm;
Thickness: 775±25μm;
|
Application: Semi Standard;
Material: Compound Semiconductor;
Type: P-Type Semiconductor;
Growth Method: CZ;
Crystal Orientation: 100;
Dopant: Boron;
Resistivity: 1-100Ω;
Frront Side: Polished;
Edge: Polished;
Diameter: 300±0.2mm;
Thickness: 775±25μm;
|
Application: Semi Standard;
Material: Compound Semiconductor;
Type: P-Type Semiconductor;
Growth Method: CZ;
Crystal Orientation: 100;
Dopant: Boron;
Resistivity: 1-100Ω;
Frront Side: Polished;
Edge: Polished;
Diameter: 300±0.2mm;
Thickness: 775±25μm;
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