| Specification |
Material: Silicon Carbide (SiC);
Refractoriness (℃): 1580< Refractoriness< 1770;
Shape: Beam;
Customization: Yes;
Delivery Time: According to The Detailed Order and Negotation;
Feature: Long Time Materials;
Type: Refractory Material;
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Material: Microporous Foam Ceramic;
Refractoriness (℃): 1580< Refractoriness< 1770;
Shape: Board;
Usage: Aerospace, Ceramic Industry, Energy Industry, Glass Industry, Non-Metallic Mineral Processing Industry, Scientific Research and Experiments, Steel Industry;
Crystalline Phase: Corundum/Mullite;
Volume Density: 0.4~0.6g/Cm³;
Maximum Use Temperature: 1800℃;
Long-Term Use Temperature: 1750℃;
Permanent Linear Change on Heating: ≤±0.5%(1750℃*3h);
|
Material: Microporous Foam Ceramic;
Refractoriness (℃): 1580< Refractoriness< 1770;
Shape: Board;
Usage: Aerospace, Ceramic Industry, Energy Industry, Glass Industry, Non-Metallic Mineral Processing Industry, Scientific Research and Experiments, Steel Industry;
Crystalline Phase: Corundum/Mullite;
Volume Density: 0.4~0.6g/Cm³;
Maximum Use Temperature: 1800℃;
Long-Term Use Temperature: 1750℃;
Permanent Linear Change on Heating: ≤±0.5%(1750℃*3h);
|
Material: Microporous Foam Ceramic;
Refractoriness (℃): 1580< Refractoriness< 1770;
Shape: Board;
Usage: Aerospace, Ceramic Industry, Energy Industry, Glass Industry, Non-Metallic Mineral Processing Industry, Scientific Research and Experiments, Steel Industry;
Crystalline Phase: Corundum/Mullite;
Volume Density: 0.4~0.6g/Cm³;
Maximum Use Temperature: 1800℃;
Long-Term Use Temperature: 1750℃;
Permanent Linear Change on Heating: ≤±0.5%(1750℃*3h);
|
Material: Microporous Foam Ceramic;
Refractoriness (℃): 1580< Refractoriness< 1770;
Shape: Board;
Usage: Aerospace, Ceramic Industry, Energy Industry, Glass Industry, Non-Metallic Mineral Processing Industry, Scientific Research and Experiments, Steel Industry;
Crystalline Phase: Corundum/Mullite;
Volume Density: 0.4~0.6g/Cm³;
Maximum Use Temperature: 1800℃;
Long-Term Use Temperature: 1750℃;
Permanent Linear Change on Heating: ≤±0.5%(1750℃*3h);
|