| Specification |
Usage: Telephone, Workstation, Server, Mobile phone;
Type: Wireless;
Support Network: GSM;
Condition: New;
Insertion Loss: 1.2dB Max;
Isolation: 22dB Min;
Impedance: 50ohm;
Power Rating: 100W Max;
Connector: N Female or Customized;
Color: Black Plated;
Application: in-Building Das;
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Usage: Telephone, Workstation, 5g Communication Base Stations;
Type: Wireless;
Support Network: GSM;
Information content: Data;
Condition: New;
Output Power (Max): 20W;
Gain (Max): 43dB;
Avg Output Power P-1: 15W;
Gain Flatness: ±4.0dB;
Harmonic: -20dbc;
Spurious: -50dbc;
Working Temperature: -20~+60℃;
Name: GaN RF Power Amplifier;
Key: Solid State RF Power Amplifier;
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Usage: Telephone, Workstation, Satellite Communication;
Type: Wireless;
Support Network: GSM;
Information content: Data;
Condition: New;
Output Power (Max): 16W;
Gain (Max): 43dB;
Gain Flatness: ±1.5dB;
Harmonic: -20dbc;
Spurious: -50dbc;
Name: GaN RF Power Amplifier;
Key: Solid State RF Power Amplifier;
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Usage: Workstation, Radiation Immunity Test System;
Type: Wireless;
Support Network: GSM;
Information content: Data;
Condition: New;
Output Power (Max): 100-250W;
Input Standing Wave: 2.0;
Output Standing Wave: 2.0-4.5;
AC Working Voltage: 198V-240V, 340V-530V;
Working Temperature: 0-40℃;
Name: GaN RF Power Amplifier;
Key: Signal Amplifier;
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Usage: Workstation, Wireless Communication,Satellite Communication,;
Type: Wireless;
Support Network: GSM;
Information content: Data;
Condition: New;
Output Power (Max): 1W;
Gain (Max): 30 dB;
Avg Output Power P-1: 22dBm;
Gain Flatness: ±4.0dB;
Harmonic: -9dbc;
Spurious: -60dbc;
Working Temperature: -20~+60℃;
Name: GaN RF Power Amplifier;
Key: Signal Amplifier;
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