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Industrial-Grade Mosfet Hy5608W N-Channel for Motor Control

About this Item
Details
Company Profile

Price

Min. Order Reference FOB Price

10 Pieces Negotiable

Sepcifications

  • Certification RoHS, CE, ISO, CCC
  • Installation Plug-in Triode
  • Working Frequency Low Frequency
  • Power Level Small Power
  • Function Photosensitive, Darlington Tube, Power Triode
  • Structure Diffusion
  • Material Silicon
  • Transport Package Box
  • Specification TO-220
  • Origin China
  • Batch Number 2022+
  • Manufacturing Technology Discrete Device
  • Type P-Type Semiconductor
  • Application UPS or AC Switch Motor Control
  • Signal Processing Switch Controller

Product Description

Product Description : Attribute Description Product Name HY5608W N-Channel MOSFET Model Number HY5608W Type N-Channel MOSFET Voltage Rating 60V Current Rating 50A On-Resistance (RDS(on)) 8.5mΩ (typical) Package Type TO-252 (DPAK) Applications Power supplies, motor control, ...

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Power Mosfet Comparison
Transaction Info
Price Negotiable US$0.12 / Piece US$0.062 / Piece US$0.0284 / Piece US$0.0354 / Piece
Min Order 10 Pieces 1 Piece 1 Piece 1 Piece 1 Piece
Payment Terms T/T, PayPal, Western Union LC, T/T, D/P, PayPal, Western Union, Small-amount payment, Money Gram LC, T/T, D/P, PayPal, Western Union, Small-amount payment, Money Gram LC, T/T, D/P, PayPal, Western Union, Small-amount payment, Money Gram LC, T/T, D/P, PayPal, Western Union, Small-amount payment, Money Gram
Quality Control
Product Certification RoHS, CE, ISO, CCC RoHS, CE, ISO, CCC RoHS, CE, ISO, CCC RoHS, CE, ISO, CCC RoHS, CE, ISO, CCC
Management System Certification - - - - -
Trade Capacity
Export Markets North America, South America, Europe, Southeast Asia/ Mideast North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue - - - - -
Business Model ODM, OEM - - - -
Average Lead Time Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays		 Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays		 Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays		 Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays		 Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays
Product Attributes
Specification
Installation: Plug-in Triode;
Working Frequency: Low Frequency;
Power Level: Small Power;
Function: Photosensitive, Darlington Tube, Power Triode;
Structure: Diffusion;
Material: Silicon;
Batch Number: 2022+;
Manufacturing Technology: Discrete Device;
Type: P-Type Semiconductor;
Application: UPS or AC Switch Motor Control;
Signal Processing: Switch Controller;
Encapsulation Structure: Plastic Sealed Transistor;
Installation: SMD Triode;
Working Frequency: Overclocking;
Power Level: High Power;
Function: Photosensitive, Darlington Tube, Power Triode, Switching Triode;
Structure: Planar;
Material: Silicon;
Drain-Source Voltage: -60V;
Continuous Drain Current: -5A;
Power Dissipation: 3W;
Drain-Source on-Resistance: <50MΩ @ Vgs=-10V;
Encapsulation Structure: Plastic Sealed Transistor;
Installation: SMD Triode;
Working Frequency: Overclocking;
Power Level: High Power;
Function: Photosensitive, Darlington Tube, Power Triode, Switching Triode;
Structure: Planar;
Material: Silicon;
Drain-Source Voltage: 100V;
Continuous Drain Current: 3A;
Power Dissipation: 1.5W (Ta=25°C);
Drain-Source on-Resistance: 170MΩ @ 4.5V;
Encapsulation Structure: Plastic Sealed Transistor;
Installation: SMD Triode;
Working Frequency: Overclocking;
Power Level: High Power;
Function: Photosensitive, Darlington Tube, Power Triode, Switching Triode;
Structure: Planar;
Material: Silicon;
Drain-Source Voltage: 60V;
Continuous Drain Current: 3A;
Power Dissipation: 1.5W (Ta=25°C);
Drain-Source on-Resistance: 110MΩ @ 4.5V;
Encapsulation Structure: Plastic Sealed Transistor;
Installation: SMD Triode;
Working Frequency: Overclocking;
Power Level: High Power;
Function: Photosensitive, Darlington Tube, Power Triode, Switching Triode;
Structure: Planar;
Material: Silicon;
Drain-Source Voltage: 100V;
Continuous Drain Current: 2A;
Power Dissipation: 1.25W;
Drain-Source on-Resistance: 240MΩ @ Vgs=10V;
Supplier Name

Simentor Electronic Limited

Gold Member Audited Supplier

Shenzhen Donghan System Technology Co., Ltd.

Diamond Member Audited Supplier

Shenzhen Donghan System Technology Co., Ltd.

Diamond Member Audited Supplier

Shenzhen Donghan System Technology Co., Ltd.

Diamond Member Audited Supplier

Shenzhen Donghan System Technology Co., Ltd.

Diamond Member Audited Supplier

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