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Pmbs3906
US$0.001-0.10 / Piece
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What is PNP Transistor Pmbs3906 Sot-23 Surface Mount Switching Transistor

About this Item
Details
Company Profile

Price

Purchase Qty. Reference FOB Price

10-999 Pieces US$0.10

1,000-9,999 Pieces US$0.01

10,000+ Pieces US$0.001

Sepcifications

  • Certification RoHS, CE, ISO, CCC
  • Encapsulation Structure Plastic Sealed Transistor
  • Installation Chip Transistor
  • Working Frequency General Purpose / DC Applications, Non-High Freque
  • Power Level Small Power
  • Function Photosensitive, Darlington Tube, Power Triode, Switching Triode
  • Structure PNP
  • Material Silicon
  • Transport Package Packgae
  • Specification SMD
  • Trademark Original
  • Origin China
  • Vbe Saturation(Vbe(Sat)) -40V
  • Current - Collector Cutoff -200mA
  • Pd - Power Dissipation 200MW
  • Hfe 100~300
  • Operating Temperature Range -55℃ ~ +150℃
  • Application Areas Switching, Amplification, Power Management, Consum
  • Package Method Tape & Reel
  • Qualtity New and Original

Product Description

Category PNP transistor/Bipolar (BJT)/Single Bipolar Transistors Manufacturer Original Package SOT-23 Vbe Saturation(VBE(sat)) -40V Current - Collector Cutoff -200mA Pd - Power Dissipation 200mW type PNP Company Profile Q1:What service do you have? We ...

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Pmbs3906 Comparison
Transaction Info
Price US$0.001-0.10 / Piece US$0.0848 / Piece US$0.2026 / Piece US$0.1376 / Piece US$0.1376 / Piece
Min Order 10 Pieces 1 Piece 1 Piece 1 Piece 1 Piece
Payment Terms LC, T/T LC, T/T, D/P, PayPal, Western Union, Small-amount payment, Money Gram LC, T/T, D/P, PayPal, Western Union, Small-amount payment, Money Gram LC, T/T, D/P, PayPal, Western Union, Small-amount payment, Money Gram LC, T/T, D/P, PayPal, Western Union, Small-amount payment, Money Gram
Quality Control
Product Certification RoHS, CE, ISO, CCC RoHS, CE, ISO, CCC RoHS, CE, ISO, CCC RoHS, CE, ISO, CCC RoHS, CE, ISO, CCC
Management System Certification - - - - -
Trade Capacity
Export Markets North America, South America, Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea), Australia North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue - - - - -
Business Model Own Brand, ODM - - - -
Average Lead Time Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays		 Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays		 Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays		 Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays		 Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays
Product Attributes
Specification
Encapsulation Structure: Plastic Sealed Transistor;
Installation: Chip Transistor;
Working Frequency: General Purpose / DC Applications, Non-High Freque;
Power Level: Small Power;
Function: Photosensitive, Darlington Tube, Power Triode, Switching Triode;
Structure: PNP;
Material: Silicon;
Vbe Saturation(Vbe(Sat)): -40V;
Current - Collector Cutoff: -200mA;
Pd - Power Dissipation: 200MW;
Hfe: 100~300;
Operating Temperature Range: -55℃ ~ +150℃;
Application Areas: Switching, Amplification, Power Management, Consum;
Package Method: Tape & Reel;
Qualtity: New and Original;
Encapsulation Structure: Plastic Sealed Transistor;
Installation: SMD Triode;
Working Frequency: Overclocking;
Power Level: High Power;
Function: Photosensitive, Darlington Tube, Power Triode, Switching Triode;
Structure: Planar;
Material: Silicon;
Drain-Source Voltage: -20V;
Continuous Drain Current: -4.8A;
Power Dissipation: 2W;
Drain-Source on-Resistance: 55MΩ @ Vgs = -4.5V;
Encapsulation Structure: Plastic Sealed Transistor;
Installation: SMD Triode;
Working Frequency: Overclocking;
Power Level: High Power;
Function: Photosensitive, Darlington Tube, Power Triode, Switching Triode;
Structure: Planar;
Material: Silicon;
Drain-Source Voltage: 60V;
Continuous Drain Current: 4A;
Power Dissipation: 3W;
Drain-Source on-Resistance: 85MΩ @ Vgs=10V, ID=4A;
Encapsulation Structure: Plastic Sealed Transistor;
Installation: SMD Triode;
Working Frequency: Overclocking;
Power Level: High Power;
Function: Photosensitive, Darlington Tube, Power Triode, Switching Triode;
Structure: Planar;
Material: Silicon;
Drain-Source Voltage: 60V;
Continuous Drain Current: 5A;
Power Dissipation: 3W;
Drain-Source on-Resistance: 100MΩ @ 4.5V;
Encapsulation Structure: Plastic Sealed Transistor;
Installation: SMD Triode;
Working Frequency: Overclocking;
Power Level: High Power;
Function: Photosensitive, Darlington Tube, Power Triode, Switching Triode;
Structure: Planar;
Material: Silicon;
Drain-Source Voltage: -60V;
Continuous Drain Current: -4.3A;
Power Dissipation: 3W;
Drain-Source on-Resistance: 86MΩ @ Vgs=-10V;
Supplier Name

ShenZhen Nova Semiconductor Co., Ltd.

Diamond Member Audited Supplier

Shenzhen Donghan System Technology Co., Ltd.

Diamond Member Audited Supplier

Shenzhen Donghan System Technology Co., Ltd.

Diamond Member Audited Supplier

Shenzhen Donghan System Technology Co., Ltd.

Diamond Member Audited Supplier

Shenzhen Donghan System Technology Co., Ltd.

Diamond Member Audited Supplier

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