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High Voltage Diode 500kv
US$0.12-1.26 / Piece
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What is N-Channel Enhancement Mode Field Effect Transistor Fast Switching Speed SOT-363 Fetures Applications 2N7002KCDWQ

About this Item
Details
Company Profile

Price

Purchase Qty. Reference FOB Price

1-9 Pieces US$1.26

10-99 Pieces US$0.12

100+ Pieces US$0.93

Sepcifications

  • Certification RoHS
  • Function Switch Transistor
  • Transport Package Plastic Package
  • Specification Customized
  • Trademark YJ
  • Origin Guangdong, China
  • Features1 Extremely Low Switching Loss
  • Features2 Excellent Stability and Uniformity
  • Features3 100% Avalanche Tested
  • Features4 Built-in ESD Diode
  • Application1 Switch Mode Power Supply (SMPS)
  • Application2 Power Factor Correction (Pfc)
  • Application3 Uninterruptible Power Supply (UPS)
  • Application4 AC to DC Converters
  • Application5 Telecom
  • Application6 TV Power & LED Lighting Power

Product Description

N-Channel Enhancement Mode Field Effect Transistor Fast Switching Speed SOT-363 Fetures Applications 2N7002KCDWQ Product Summary - VDS 60V - ID 300mA - RDS(ON)( at VGS=10V) <2.5ohm - RDS(ON)( at VGS=4.5V) <3.0ohm - ESD Protected Up to 2.0KV (HBM) General Description : - Trench Power MV MOSFET ...

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High Voltage Diode 500kv Comparison
Transaction Info
Price US$0.12-1.26 / Piece US$0.195 / Piece US$0.17 / Piece US$0.193 / Piece US$0.147 / Piece
Min Order 1 Piece 3,000 Pieces 3,000 Pieces 3,000 Pieces 2,500 Pieces
Payment Terms LC, T/T - - - -
Quality Control
Product Certification RoHS RoHS, CE, ISO, CCC RoHS, CE, ISO, CCC RoHS, CE, ISO, CCC RoHS, CE, ISO, CCC
Management System Certification - - - - -
Trade Capacity
Export Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue - - - - -
Business Model - - - - -
Average Lead Time Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays		 Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays		 Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays		 Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays		 Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays
Product Attributes
Specification
Function: Switch Transistor;
Features1: Extremely Low Switching Loss;
Features2: Excellent Stability and Uniformity;
Features3: 100% Avalanche Tested;
Features4: Built-in ESD Diode;
Application1: Switch Mode Power Supply (SMPS);
Application2: Power Factor Correction (Pfc);
Application3: Uninterruptible Power Supply (UPS);
Application4: AC to DC Converters;
Application5: Telecom;
Application6: TV Power & LED Lighting Power;
Shape: to-247;
Cooling Method: Naturally Cooled Tube;
Function: Switch Transistor;
Working Frequency: Low Frequency;
Structure: IGBT;
Encapsulation Structure: Plastic Sealed Transistor;
Power Level: Medium Power;
Material: Silicon;
Features1: Vce=650V;
Features2: IC=80A;
Features3: Trench Fs IGBT;
Features4: 650V 80A Trench Fs IGBT;
Shape: Dfn5*6;
Cooling Method: Naturally Cooled Tube;
Function: Switch Transistor;
Working Frequency: Low Frequency;
Structure: N Channel;
Encapsulation Structure: Plastic Sealed Transistor;
Power Level: Medium Power;
Material: Silicon;
Features1: Vds (V)=100V;
Features2: ID=60A;
Features3: RDS(on)<12MΩ;
Features4: 100V N Channel Mosfet;
Shape: Nano;
Cooling Method: Naturally Cooled Tube;
Function: Switch Transistor;
Working Frequency: Low Frequency;
Structure: Ipm;
Encapsulation Structure: Plastic Sealed Transistor;
Power Level: Medium Power;
Material: Silicon;
Features1: Vdss=500V;
Features2: ID=7A;
Features3: Ipm;
Features4: 500V 7A Ipm;
Shape: to-263-2;
Cooling Method: Naturally Cooled Tube;
Function: Switch Transistor;
Working Frequency: Low Frequency;
Structure: Sic;
Encapsulation Structure: Plastic Sealed Transistor;
Power Level: Medium Power;
Material: Silicon;
Features1: VDC=650V;
Features2: If=10A;
Features4: 650V Sic Schottky Diode;
Supplier Name

Dongguan Merry Electronic Co., Ltd.

Diamond Member Audited Supplier

Dongguan Meizhao Electronics Co., Ltd.

Diamond Member Audited Supplier

Dongguan Meizhao Electronics Co., Ltd.

Diamond Member Audited Supplier

Dongguan Meizhao Electronics Co., Ltd.

Diamond Member Audited Supplier

Dongguan Meizhao Electronics Co., Ltd.

Diamond Member Audited Supplier

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