PIC18FXXQ84 available in 28/40/44/48-pin devices microcontroller pictures & photos

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What is PIC18FXXQ84 available in 28/40/44/48-pin devices microcontroller

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Price

Purchase Qty. Reference FOB Price

1-9 Pieces US$0.50

10+ Pieces US$0.45

Sepcifications

Certification RoHS
Transport Package Plastic Package
Specification SOT-23 TO-92 SC70
Origin Guangdong, China
Features1 Glass Passivated Chip
Features2 Low Forward Voltage Drop
Features3 Ideal for Printed Circuit Board
Features4 High Surge Current Capability

Product Description

Product Description Part Name PIC18FXXQ84 available in 28/40/44/48-pin devices microcontroller Features: • C Compiler Optimized RISC Architecture • Operating Speed: - DC - 64 MHz clock input - 62.5 ns minimum instruction cycle • Eight Direct Memory Access (DMA) Controllers: ...

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Dongguan Merry Electronic Co., Ltd.

Diamond Member Since 2021

Audited Supplier

Rating & Reviews: 5.0/5.0

(8 Reviews)

Main Products Diode, Transistor, Mosfet, Bridge, IC, Integrated Circuits, Microcontroller, Schottky ...
Address Floor 3, Block, 5 Number. 2 Waltai Road, Wanjiang District, Dongguan, Guangdong, China
Main Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
International Commercial Terms(Incoterms) FOB, EXW
Terms of Payment LC, T/T
Average Lead Time Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays

Rectifier Comparison

	PIC18FXXQ84 available in 28/40/44/48-pin devices microcontroller Contact Now	Quick View Original New 23n50e 23n50 Mosfet 500V 23A to-247 Inverter Field Effect Mosfet Transistor Contact Now	Original Irf5305pbf Electronic Components to-220 Irf5305 Contact Now	High Quality Ds2501 2501 90W to-92 Power Charging Chip IC Transistor Contact Now	Quick View Rn1301 Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 Ma 250 MHz 100 MW Surface Mount Sc-70 SMD Rn1301, Lf Contact Now

Transaction Info
	PIC18FXXQ84 available in 28/40/44/48-pin devices microcontroller Contact Now	Quick View Original New 23n50e 23n50 Mosfet 500V 23A to-247 Inverter Field Effect Mosfet Transistor Contact Now	Original Irf5305pbf Electronic Components to-220 Irf5305 Contact Now	High Quality Ds2501 2501 90W to-92 Power Charging Chip IC Transistor Contact Now	Quick View Rn1301 Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 Ma 250 MHz 100 MW Surface Mount Sc-70 SMD Rn1301, Lf Contact Now
Price	US$0.45-0.50 / Piece	US$0.10-0.50 / Piece	US$0.14-0.16 / Piece	US$0.15-2.45 / Piece	US$0.01-1.00 / Piece
Min Order	1 Piece	1 Piece	1 Piece	20 Pieces	1 Piece
Payment Terms	LC, T/T	LC, T/T	T/T, PayPal, Western Union	T/T, PayPal, Western Union	LC, T/T
Quality Control
Product Certification	RoHS	-	-	-	-
Management System Certification	-	-	-	-	-
Trade Capacity
Export Markets	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe	North America, South America, Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea), Australia	South America, Europe, Southeast Asia/ Mideast, South Asia	South America, Europe, Southeast Asia/ Mideast, South Asia	North America, South America, Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea), Australia
Annual Export Revenue	-	-	-	-	-
Business Model	-	Own Brand, ODM	-	-	Own Brand, ODM
Average Lead Time	Peak Season Lead Time: within 15 workdays Off Season Lead Time: within 15 workdays	Peak Season Lead Time: within 15 workdays Off Season Lead Time: within 15 workdays	Peak Season Lead Time: one month Off Season Lead Time: within 15 workdays	Peak Season Lead Time: one month Off Season Lead Time: within 15 workdays	Peak Season Lead Time: within 15 workdays Off Season Lead Time: within 15 workdays
Product Attributes
Specification	Features1: Glass Passivated Chip; Features2: Low Forward Voltage Drop; Features3: Ideal for Printed Circuit Board; Features4: High Surge Current Capability;	Shape: DIP/SMD; Shielding Type: N/a; Cooling Method: N/a; Function: N/a; Working Frequency: N/a; Structure: N/a; Encapsulation Structure: DIP/SMD; Power Level: N/a; Material: N/a;	Detailed Description: P-Channel 55 V 31A (Tc) 110W (Tc) Through Hole to-; Description: Mosfet P-CH 55V 31A To220ab; Fet Type: P-Channel;	Function: High Back Pressure Transistor, Switch Transistor; Manufacturer Product Number: Ds2501;	Shape: DIP; Function: Bipolar Transistor; Encapsulation Structure: SMD; Material: Germanium; Transistor Type: NPN - Pre-Biased; Current - Collector (IC) (Max): 100 Ma; Voltage - Collector Emitter Breakdown (M: 50 V; Resistor - Base (R1): 4.7 Kohms; Resistor - Emitter Base (R2): 4.7 Kohms; DC Current Gain (Hfe) (Min) @ IC, Vce: 30 @ 10mA, 5V; Vce Saturation (Max) @ Ib, IC: 300mv @ 250µa, 5mA; Current - Collector Cutoff (Max): 500na; Frequency - Transition: 250 MHz; Power - Max: 100 MW; Mounting Type: Surface Mount; Package / Case: Sc-70, Sot-323; Base Product Number: Rn1301;
Supplier Name	Dongguan Merry Electronic Co., Ltd.	ShenZhen Nova Semiconductor Co., Ltd.	Shenzhen Jin Da Peng Technology Co., Ltd.	Shenzhen Jin Da Peng Technology Co., Ltd.	ShenZhen Nova Semiconductor Co., Ltd.
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What is PIC18FXXQ84 available in 28/40/44/48-pin devices microcontroller

Price

Sepcifications