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1200V 600A Trench IGBT
US$68.00 / Piece
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What is IGBT Module Mg600hf12tle3 1200V 600A Trench High-Performance Transistor

About this Item
Details
Company Profile

Price

Min. Order Reference FOB Price

4 Pieces US$68.00 / Piece

Sepcifications

  • Certification RoHS, CE, ISO, CCC
  • Shape E3
  • Cooling Method Naturally Cooled Tube
  • Function Switch Transistor, High Frequency Switching Application
  • Working Frequency High Frequency
  • Structure IGBT
  • Encapsulation Structure Plastic Sealed Transistor
  • Power Level High Power
  • Material Silicon
  • Transport Package Plastic Package
  • Specification 1200V
  • Trademark Merryelc
  • Origin Guangdong, China
  • Features1 Low Vce (Sat) with Trench Technologtechnology
  • Features2 Low Switching Losses Especially Eoff
  • Features3 Vce(Sat) with Positive Temperature Coefficien
  • Features4 High Short Circuit Capability(10us 10us)
  • Features5 Including Ultra Fast & Soft Recovery Anti Anti-PAR
  • Features6 Low Inductanc Inductance Package
  • Features7 Maximum Junction Temperature 175 ℃

Product Description

Specification IGBT Module MG600HF12TLE3 1200V 600A Trench high-performance Transistor IGBT Modules VCES 1200V IC 600A Applications Motion/servo control High frequency switching application UPS (Uninterruptible Power Supplies) Welding machine Features Low VCE(sat) with Trench technology Low switching ...

Learn More

1200V 600A Trench IGBT Comparison
Transaction Info
Price US$68.00 / Piece US$0.10-0.50 / Piece US$0.10-0.50 / Piece US$0.10 / Piece US$0.10-0.50 / Piece
Min Order 4 Pieces 1 Piece 1 Piece 100 Pieces 1 Piece
Payment Terms - LC, T/T LC, T/T LC, T/T LC, T/T
Quality Control
Product Certification RoHS, CE, ISO, CCC - - - -
Management System Certification - - - - -
Trade Capacity
Export Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea), Australia North America, South America, Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea), Australia North America, South America, Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea), Australia North America, South America, Europe, Southeast Asia/ Mideast, East Asia(Japan/ South Korea), Australia
Annual Export Revenue - - - - -
Business Model - Own Brand, ODM Own Brand, ODM Own Brand, ODM Own Brand, ODM
Average Lead Time Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays		 Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays		 Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays		 Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays		 Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays
Product Attributes
Specification
Shape: E3;
Cooling Method: Naturally Cooled Tube;
Function: Switch Transistor, High Frequency Switching Application;
Working Frequency: High Frequency;
Structure: IGBT;
Encapsulation Structure: Plastic Sealed Transistor;
Power Level: High Power;
Material: Silicon;
Features1: Low Vce (Sat) with Trench Technologtechnology;
Features2: Low Switching Losses Especially Eoff;
Features3: Vce(Sat) with Positive Temperature Coefficien;
Features4: High Short Circuit Capability(10us 10us);
Features5: Including Ultra Fast & Soft Recovery Anti Anti-PAR;
Features6: Low Inductanc Inductance Package;
Features7: Maximum Junction Temperature 175 ℃;
Shape: DIP/SMD;
Shielding Type: N/a;
Cooling Method: N/a;
Function: N/a;
Working Frequency: N/a;
Structure: N/a;
Encapsulation Structure: DIP/SMD;
Power Level: N/a;
Material: N/a;
Shape: DIP/SMD;
Shielding Type: N/a;
Cooling Method: N/a;
Function: N/a;
Working Frequency: N/a;
Structure: N/a;
Encapsulation Structure: DIP/SMD;
Power Level: N/a;
Material: N/a;
Shape: DIP;
Encapsulation Structure: DIP/SMD;
Material: Silicon;
Shape: DIP/SMD;
Shielding Type: N/a;
Cooling Method: N/a;
Function: N/a;
Working Frequency: N/a;
Structure: N/a;
Encapsulation Structure: DIP/SMD;
Power Level: N/a;
Material: N/a;
Supplier Name

Dongguan Meizhao Electronics Co., Ltd.

Diamond Member Audited Supplier

ShenZhen Nova Semiconductor Co., Ltd.

Diamond Member Audited Supplier

ShenZhen Nova Semiconductor Co., Ltd.

Diamond Member Audited Supplier

ShenZhen Nova Semiconductor Co., Ltd.

Diamond Member Audited Supplier

ShenZhen Nova Semiconductor Co., Ltd.

Diamond Member Audited Supplier

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