| Specification |
Application: Detector, Diode, LCD Display Controller, Power Electronic Components, Radio, Refrigerator, Solar Cell, Television, Temperature Measurement, EV, Solar, Wind, UPS, Motor Drives;
Batch Number: 2023+;
Manufacturing Technology: Discrete Device;
Material: Compound Semiconductor;
Model: ST;
Package: SMD;
Signal Processing: Analog Digital Composite and Function;
Type: N-Type Semiconductor;
Product Type: IGBT;
Voltage Rating (Vces): 750V ~ 1700V;
Current Rating (IC): 600A ~ 900A;
Max. Junction Temperature: 175°c;
Operating Temperature: -40°c ~ +150°c;
Isolation Voltage: 4000V RMS;
Technology: Trench Gate, Low Vce(Sat);
Diode: Anti-Parallel, Soft Recovery;
Cooling: Air or Water Cooling;
Applications: EV, Solar, Wind, UPS, Motor Drives;
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Application: Welding Machine, UPS;
Batch Number: 2022;
Manufacturing Technology: Discrete Device;
Material: Silicon;
Model: G50n120d;
Package: to-264;
Type: N-Type Semiconductor;
Voltage: 1200V;
Current: 50A;
Brand: Wxdh;
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Application: Welding, UPS, Three-Leve Inverter;
Batch Number: 2022;
Manufacturing Technology: Discrete Device;
Material: Metal-Oxide Semiconductor;
Model: Dgc75c120m2t;
Package: Module;
Type: N-Type Semiconductor;
Brand: Wxdh;
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Application: Solar Inverters;
Batch Number: 2022;
Manufacturing Technology: Discrete Device;
Material: Sic;
Model: Dhc1m160120d;
Package: to-3p;
Type: N-Type Semiconductor;
Voltage: 1200V;
Current: 18A;
Brand: Wxdh;
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Application: Diode, Switching Power Supply;
Batch Number: 2022;
Manufacturing Technology: Discrete Device;
Material: Silicon;
Model: Mbrf10150CT;
Package: to-220f;
Type: N-Type Semiconductor;
Voltage: 150V;
Current: 10A;
Brand: Wxdh;
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