| Specification |
Batch Number: 2010+;
Manufacturing Technology: Optoelectronic Semiconductor;
Material: Compound Semiconductor;
Package: 25PCS in One Cassette Packaging;
Type: Intrinsic Semiconductor;
Size: 2 Inch;
Materials: Sapphire Al2O3;
Surface Treatment: Ssp or DSP;
Growth Growth: Ky;
Orientation: C Plane;
Thickness: 430um;
Brand: Finewin;
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Application: Welding, UPS, Three-Leve Inverter;
Batch Number: 2024;
Manufacturing Technology: Discrete Device;
Material: Metal-Oxide Semiconductor;
Model: Dgd600h120L2t;
Package: Econodual3;
Type: N-Type Semiconductor;
Brand: Wxdh;
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Manufacturing Technology: Discrete Device;
Type: N-Type Semiconductor;
Voltage: 40V;
Current: 40A;
Manufacturing Technology: Discrete Device;
Type: N-type Semiconductor;
Material: Metal-Oxide Semiconductor;
Package: Dfn3*3;
Application: Power Switching, Converters, Full Bridge Control;
Model: Dsr070n04la;
Batch Number: 2023;
Brand: Wxdh;
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Manufacturing Technology: Discrete Device;
Type: N-Type Semiconductor;
Voltage: 85V;
Current: 360A;
Manufacturing Technology: Discrete Device;
Type: N-type Semiconductor;
Material: Metal-Oxide Semiconductor;
Package: Toll;
Application: Power Switching Applications;
Model: Dsu011n08n3a;
Batch Number: 2023;
Brand: Wxdh;
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Application: Detector, Diode, LCD Display Controller, Power Electronic Components, Radio, Refrigerator, Solar Cell, Television, Temperature Measurement, EV, Solar, Wind, UPS, Motor Drives;
Batch Number: 2023+;
Manufacturing Technology: Discrete Device;
Material: Compound Semiconductor;
Model: ST;
Package: SMD;
Signal Processing: Analog Digital Composite and Function;
Type: N-Type Semiconductor;
Product Type: IGBT;
Voltage Rating (Vces): 750V ~ 1700V;
Current Rating (IC): 600A ~ 900A;
Max. Junction Temperature: 175°c;
Operating Temperature: -40°c ~ +150°c;
Isolation Voltage: 4000V RMS;
Technology: Trench Gate, Low Vce(Sat);
Diode: Anti-Parallel, Soft Recovery;
Cooling: Air or Water Cooling;
Applications: EV, Solar, Wind, UPS, Motor Drives;
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