| Specification |
Application: Semi Standard;
Material: Compound Semiconductor;
Type: P-Type Semiconductor;
Growth Method: CZ;
Crystal Orientation: 100;
Dopant: Boron;
Resistivity: 1-100Ω;
Frront Side: Polished;
Edge: Polished;
Diameter: 50±0.2mm;
Thickness: 280±25μm;
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Application: Radio, RF Energy;
Batch Number: 2025;
Manufacturing Technology: Discrete Device;
Material: GaN;
Model: GaN;
Package: Mmic;
Signal Processing: Analog Digital Composite and Function;
Type: P-Type Semiconductor;
Output Power: 48dBm;
Operation Temperature: up to 150degree;
Frequency Band: 12000MHz-18000MHz;
Feature: Wideband;
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Application: Radio, RF Energy;
Batch Number: 2025;
Manufacturing Technology: Discrete Device;
Material: GaN;
Model: GaN;
Package: Mmic;
Signal Processing: Analog Digital Composite and Function;
Type: P-Type Semiconductor;
Output Power: 55dBm;
Operation Temperature: up to 150degree;
Frequency Band: 2700MHz-3500MHz;
Feature: High Power;
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Application: Radio, RF Energy;
Batch Number: 2025;
Manufacturing Technology: Discrete Device;
Material: GaN;
Model: GaN;
Package: Mmic;
Signal Processing: Analog Digital Composite and Function;
Type: P-Type Semiconductor;
Output Power: 50dBm-Cw;
Operation Temperature: up to 150degree;
Frequency Band: 5000MHz-6000MHz;
Feature: High Power;
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Application: Detector, Diode, LCD Display Controller, Power Electronic Components, Radio, Refrigerator, Solar Cell, Television, Temperature Measurement, Laser;
Batch Number: up-to-Date;
Manufacturing Technology: Integrated Circuits Device;
Material: Sic;
Model: at-61004;
Package: No;
Signal Processing: No;
Type: Intrinsic Semiconductor;
Production Method: CVD;
Purity: 99.9999%;
Processing Method: Double Surface Polishing;
Main Appliying 1: Chips Wafers;
Main Appliying 2: Laser,Radar;
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