| Specification |
Encapsulation Structure: Chip Transistor;
Installation: Plug-in Triode;
Working Frequency: High Frequency;
Power Level: High Power;
Function: Photosensitive, Power Triode, Switching Triode;
Structure: Alloy;
Material: Silicon;
Operating Temperature: -55~ 150(Celsius);
Maximum Allowable Collector Current: 10A;
Maximum Collector Current (Icm): 500mA;
Maximum Power: 300MW;
Transistor Polarity: NPN Transistor;
Collector Breakdown Voltage (Vceo): 25V;
Ultrasonic Electronic Circuit Machine EQ: Ultrasonic Electronic Circuit Machine Equipment;
Supplier Type: Original Manufacturer;
DC Current Gain (Hfe) (Min) @ IC, Vce: DC Current Gain (Hfe) (Min) @ IC, Vce;
Mounting Type: Through Hole;
Type: 2sc3998;
|
Encapsulation Structure: Chip Transistor;
Installation: Plug-in Triode;
Working Frequency: High Frequency;
Power Level: High Power;
Function: Photosensitive, Power Triode, Switching Triode;
Structure: Alloy;
Material: Silicon;
Operating Temperature: -55~ 150(Celsius);
Maximum Allowable Collector Current: 10A;
Maximum Collector Current (Icm): 500mA;
Maximum Power: 300MW;
Transistor Polarity: NPN Transistor;
Collector Breakdown Voltage (Vceo): 25V;
Ultrasonic Electronic Circuit Machine EQ: Ultrasonic Electronic Circuit Machine Equipment;
Supplier Type: Original Manufacturer;
DC Current Gain (Hfe) (Min) @ IC, Vce: DC Current Gain (Hfe) (Min) @ IC, Vce;
Mounting Type: Through Hole;
Type: 2sc3998;
|
Encapsulation Structure: Chip Transistor;
Installation: Plug-in Triode;
Working Frequency: High Frequency;
Power Level: High Power;
Function: Photosensitive, Power Triode, Switching Triode;
Structure: Alloy;
Material: Silicon;
Operating Temperature: -55~ 150(Celsius);
Maximum Allowable Collector Current: 10A;
Maximum Collector Current (Icm): 500mA;
Maximum Power: 300MW;
Transistor Polarity: NPN Transistor;
Collector Breakdown Voltage (Vceo): 25V;
Ultrasonic Electronic Circuit Machine EQ: Ultrasonic Electronic Circuit Machine Equipment;
Supplier Type: Original Manufacturer;
DC Current Gain (Hfe) (Min) @ IC, Vce: DC Current Gain (Hfe) (Min) @ IC, Vce;
Mounting Type: Through Hole;
Type: 2sc3998;
|
Encapsulation Structure: Chip Transistor;
Installation: Plug-in Triode;
Working Frequency: High Frequency;
Power Level: High Power;
Function: Photosensitive, Power Triode, Switching Triode;
Structure: Alloy;
Material: Silicon;
Operating Temperature: -55~ 150(Celsius);
Maximum Allowable Collector Current: 10A;
Maximum Collector Current (Icm): 500mA;
Maximum Power: 300MW;
Transistor Polarity: NPN Transistor;
Collector Breakdown Voltage (Vceo): 25V;
Ultrasonic Electronic Circuit Machine EQ: Ultrasonic Electronic Circuit Machine Equipment;
Supplier Type: Original Manufacturer;
DC Current Gain (Hfe) (Min) @ IC, Vce: DC Current Gain (Hfe) (Min) @ IC, Vce;
Mounting Type: Through Hole;
Type: 2sc3998;
|
Encapsulation Structure: Chip Transistor;
Installation: Plug-in Triode;
Working Frequency: High Frequency;
Power Level: High Power;
Function: Photosensitive, Power Triode, Switching Triode;
Structure: Alloy;
Material: Silicon;
Operating Temperature: -55~ 150(Celsius);
Maximum Allowable Collector Current: 10A;
Maximum Collector Current (Icm): 500mA;
Maximum Power: 300MW;
Transistor Polarity: NPN Transistor;
Collector Breakdown Voltage (Vceo): 25V;
Ultrasonic Electronic Circuit Machine EQ: Ultrasonic Electronic Circuit Machine Equipment;
Supplier Type: Original Manufacturer;
DC Current Gain (Hfe) (Min) @ IC, Vce: DC Current Gain (Hfe) (Min) @ IC, Vce;
Mounting Type: Through Hole;
Type: 2sc3998;
|