| Specification |
Application: Electronic Devices, Lighting, Power Supply, Semiconductors;
Conductive Layer: Thick Copper Layer;
Material: AlN;
Process: Direct Bonded Copper;
Thickness: Customized;
Feature: High Current Capacity and Heat Dissipation;
Copper Thickness: 100-600um;
Use Temperature: 300-400℃;
Other Available Material: Al2O3;
Other Available Process: Mo-Mn Metallization;
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Application: Industrial Ceramic, Rto/Rco & Heat Storage;
Material: Alumina, Mullite, Cordierite, Corundum;
Water Absorption: 12-18;
Groove: Plate, Single, Double, Cross, Four Footer, Chute;
Cell Number: 40 Cell;
Type: Honeycomb Ceramic Thermal Storage Media;
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Application: Industrial Ceramic, Rto/Rco & Heat Storage;
Material: Alumina, Mullite, Cordierite, Corundum;
Water Absorption: 12-18;
Groove: Plate, Single, Double, Cross, Four Footer, Chute;
Cell Number: 40 Cell;
Type: Honeycomb Ceramic Thermal Storage Media;
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Application: Industrial Ceramic, Rto/Rco & Heat Storage;
Material: Alumina, Mullite, Cordierite, Corundum;
Softening Temperature: 1400;
Groove: Plate, Single, Double, Cross, Four Footer, Chute;
Cell Number: 40 Cell;
Type: Honeycomb Ceramic Thermal Storage Media;
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Application: Industrial Ceramic, Rto/Rco & Heat Storage;
Material: Alumina, Mullite, Cordierite, Corundum;
Density: 2.1-2.41;
Groove: Plate, Single, Double, Cross, Four Footer, Chute;
Cell Number: 40 Cell;
Type: Honeycomb Ceramic Thermal Storage Media;
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