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High Voltage Semiconductor Mosfet
US$0.20 / Piece
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What is Synchronous Rectification Systems Vds 40 Low Gate Charge Mosfet

About this Item
Details
Company Profile

Price

Min. Order Reference FOB Price

660 Pieces US$0.20 / Piece

Sepcifications

  • Certification RoHS, ISO
  • Shape Metal Porcelain Tube
  • Shielding Type Sharp Cutoff Shielding Tube
  • Cooling Method Air Cooled Tube
  • Function Switch Transistor
  • Working Frequency High Frequency
  • Structure Planar
  • Encapsulation Structure Plastic Sealed Transistor
  • Power Level Medium Power
  • Material Silicon
  • Transport Package Carton
  • Specification 35x30x37cm
  • Trademark Orientalsemiconductor
  • Origin China
  • Description Extremely Low Switching Loss
  • Characteristics Excellent Stability and Uniformity
  • Applications PC Power
  • Industries LED Lighting

Product Description

Product Description General Description FSMOS® MOSFET is based on Oriental Semiconductor's unique device design to achieve low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. The low Vth series is specially optimized for synchronous rectification systems with ...

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High Voltage Semiconductor Mosfet Comparison
Transaction Info
Price US$0.20 / Piece US$0.13 / Piece US$0.097 / Piece US$13.57 / Piece US$0.967 / Piece
Min Order 660 Pieces 2,500 Pieces 500 Pieces 500 Pieces 500 Pieces
Payment Terms LC, T/T, D/P, Western Union - - - -
Quality Control
Product Certification RoHS, ISO RoHS, ISO RoHS, CE, ISO, CCC RoHS, CE, ISO, CCC RoHS, CE, ISO, CCC
Management System Certification - - - - -
Trade Capacity
Export Markets North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue - - - - -
Business Model - ODM, OEM - - -
Average Lead Time Peak Season Lead Time: one month
Off Season Lead Time: 3-6 months		 Peak Season Lead Time: 6-12 months
Off Season Lead Time: one month		 Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays		 Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays		 Peak Season Lead Time: within 15 workdays
Off Season Lead Time: within 15 workdays
Product Attributes
Specification
Shape: Metal Porcelain Tube;
Shielding Type: Sharp Cutoff Shielding Tube;
Cooling Method: Air Cooled Tube;
Function: Switch Transistor;
Working Frequency: High Frequency;
Structure: Planar;
Encapsulation Structure: Plastic Sealed Transistor;
Power Level: Medium Power;
Material: Silicon;
Description: Extremely Low Switching Loss;
Characteristics: Excellent Stability and Uniformity;
Applications: PC Power;
Industries: LED Lighting;
Shape: ST;
Shielding Type: Not Applicable;
Cooling Method: Naturally Cooled Tube;
Function: Switch Transistor;
Working Frequency: Not Applicable;
Structure: N-Channel Trench;
Encapsulation Structure: Plastic Sealed Transistor;
Power Level: Not Applicable;
Material: Silicon;
Shape: to-247-4L;
Cooling Method: Naturally Cooled Tube;
Function: Switch Transistor;
Working Frequency: Low Frequency;
Structure: Sic Mosfet;
Encapsulation Structure: Plastic Sealed Transistor;
Power Level: Medium Power;
Material: Silicon;
Features1: Vds=1200V;
Features2: ID=38A;
Features4: 1200V Silicon Carbide Power Mosfet;
Features5: High-Frequency Operation;
Features6: RoHS Compliant;
Shape: Fj;
Cooling Method: Naturally Cooled Tube;
Function: Switch Transistor;
Working Frequency: Low Frequency;
Structure: Sic Diode Power Module;
Encapsulation Structure: Plastic Sealed Transistor;
Power Level: Medium Power;
Material: Silicon;
Features1: VDC=1700V;
Features2: If=30A;
Features4: 1700V Sic Diode Power Module;
Features5: High Efficiency for Motor Control;
Features6: RoHS Compliant;
Shape: to-247;
Cooling Method: Naturally Cooled Tube;
Function: Switch Transistor;
Working Frequency: Low Frequency;
Structure: IGBT Discrete;
Encapsulation Structure: Plastic Sealed Transistor;
Power Level: Medium Power;
Material: Silicon;
Features1: Vce=1200V;
Features2: IC=40A;
Features4: 1200V IGBT Discrete;
Features5: High Short Circuit Capability;
Features6: RoHS Compliant;
Supplier Name

Shanghai Winture Electric Co., Ltd.

Gold Member Audited Supplier

Wuxi Kingful Corporation., Ltd

Gold Member Audited Supplier

Dongguan Meizhao Electronics Co., Ltd.

Diamond Member Audited Supplier

Dongguan Meizhao Electronics Co., Ltd.

Diamond Member Audited Supplier

Dongguan Meizhao Electronics Co., Ltd.

Diamond Member Audited Supplier

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